samwin SW830 rev0.1 04.10.1 general description thispowermosfet isproduced in chmc with advancedvdmostechnology of samwin.this technology enable power mosfet to have bettercharacteristics, suchas fast switching time, low on resistance,low gate charge and especiallyexcellent avalanche characteristics. it is mainly suitable forhalf bridge or full bridge resonant topologylike a electronic ballast, and alsolow power switching mode power appliances. features n-channel mosfet bv dss (minimum) r ds(on) (maximum) i d qg(typical) p d (@tc=25 ) : 500v : 1.4ohm : 5.0a :28nc :73w g s d absolute maximum ratings symbol parameter value units v dss draintosourcevoltage 500 v continuousdraincurrent(@tc=25 ) 5.5 a continuousdraincurrent(@tc=100 ) 3.7 a i dm draincurrentpulsed (note1) 22 a v gs gatetosourcevoltage 30 v e as singlepulsedavalancheenergy (note2) 390 mj e ar repetitiveavalancheenergy (note1) 7.3 mj dv/dt peakdioderecoverydv/dt (note3) 3.5 v/ns totalpowerdissipation(@tc=25 ) 73 w deratingfactorabove25 0.58 w/ t stg ,t j operatingjunctiontemperature&storagetemperature -55~+150 t l maximumleadtemperatureforsolderingpurpose,1/8fromcase for5seconds. 300 p d i d thermal characteristics /w 62 - - thermalresistance,junction-to-ambient r ja /w - 0.5 - thermalresistance,case-to-sink r cs /w 1.71 - - thermalresistance,junction-to-case r jc max typ min units value parameter symbol 1/6 .com .com .com 4 .com u datasheet
samwin SW830 rev0.1 04.10.1 electrical characteristics (tc=25 unless otherwisenoted) value symbol parameter test conditions min typ max off characteristics bv dss drain-source breakdownvoltage v gs =0v,i d =250ua 500 - - v bv dss / tj breakdown voltagetemperature coefficient i d =250ua,referenced to 25 -0.6 - v/ v ds =500v, v gs =0v i dss drain-source leakagecurrent v ds =400v, tc=125 -- 1 ua gate-source leakagecurrent v gs =30v,v ds =0v - - 100 na gate-source leakagereverse v gs =-30v, v ds =0v - - -100 na on characteristics v gs (th) gate thresholdvoltage v ds =v gs ,i d =250ua 2.0 - 4.0 v r ds(on) static drain-sourceon-state resistance v gs =10v,i d =2.5a - - 1.4 ohm dynamic characteristics ciss input capacitance - - 1100 coss output capacitance - - 115 crss reverse transfercapacitance - - 32 dynamic characteristics t d(on) turn-on delaytime - - 40 t r rise time - - 50 t d(off) turn-off delay time - - 170 t f fall time - - 50 q g total gatecharge - 28 37 q gs gate-source charge - 4 - q gd gate-drain charge (miller charge) - 12 - nc v ds =400v,v gs =10v, i d =5a (note4,5) ns v dd =250v,i d =5a r g =50ohm (note4,5) pf v gs =0v,v ds =25v, f=1mhz i gss units source-drain diode ratings and characteristics uc - 1.5 - reverse recovery charge q rr ns - 330 - i s =5a,v gs =0v di f /dt=100a/us reverse recovery time t rr v 1.5 - - i s =5a,v gs =0v diode forward voltage v sd 20 - - pulsed sourcecurrent i sm a 5 - - integral reverse p-n junction diode in the mosfet continuous source current i s unit. max. typ. min. test conditions parameter symbol g s d s notes 1. repeativity rating:pulse width limitedby junction temperature 2. l=28.1mh,i as =5a,v dd =50v,rg=0ohm, starting tj=25 3. i sd 5a,di/dt 100a/us,v dd bv dss , startingtj=25 4. pulsetest: pulsewidth 300us,duty cycle 2% 5. essentiallyindependent of operating temperature. 2/6 .com .com .com .com 4 .com u datasheet
samwin SW830 rev0.1 04.10.1 10 0 10 1 10 -1 10 0 10 1 4.5v v gs top: 15v 10v 9v 8v 7v 6v 5.5v 5v bottom:4.5v i d , d r a i n c u r r e n t [ a ] v ds ,drain-to-source voltage [v] 02 46 8 10 12 14 16 0 1 2 3 4 r d s ( o n ) d r a i n - s o u r c e o n - r e s i s t a n c e [ o h m ] i d , drain current[a] v gs =20v v gs =10v fig 1. on-state characteristics fig 3. on resistance variation vs. drain current and gate voltage fig 4.on state currentvs. allowable case temperature fig 2. transfer characteristics fig 6. gatecharge characteristics fig 5. capacitance characteristics (non-repetitive) 150 25 0 5 10 15 20 25 0 2 4 6 8 10 note:i d =5a v ds =100v v ds =250v v ds =400v v g s , g a t e - t o - s o u r c e v o l t a g e [ v ] q g ,total gatecharge [nc] 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 10 -1 10 0 10 1 note: 1.v gs =0v 2.250us test v sd ,source-drain voltage[v] 3/6 .com .com .com .com 4 .com u datasheet
samwin SW830 rev0.1 04.10.1 -100 -50 0 50 100 150 200 0.8 1.0 1.2 b v d s s [ n o r m a l i z e d ] d r a i n - s o u r c e b r e a k d o w n v o l t a g e t j ,junction temperature[ o c] 25 50 75 100 125 150 0 1 2 3 4 5 i d , d r a i n c u r r e n t [ a ] t c ,case temperature[ o c] fig 7. breakdown voltagevariation vs. junction temperature fig 8. on-resistance variation vs. junction temperature fig 11. transient thermal response curve fig 10. maximum draincurrent vs. case temperature fig9. maximum safeoperating 10 0 10 1 10 2 10 3 10 -1 10 0 10 1 10 2 note: 1.tc=25 c 2.tj=150 c 3.single pulse operationin this area limted by r ds(on) 10ms 1ms 100us i d r , r e v e r s e d r a i n c u r r e n t [ a ] v sd ,source-drain voltage[v] 10us -100 -50 0 50 100 150 0.0 0.5 1.0 1.5 2.0 2.5 3.0 note: 1.v gs =10v 2.i d =2.75a t j ,junction temperature[ o c] 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 -2 10 -1 10 0 d=0.5 0.2 0.1 0.05 0.02 note: 1.z jc (t)=1.71 o c/w max 2.duty factor,d=t1/t2 3.tj-tc=p dm * z jc (t) single pulse t 1 ,square wave pulse duration [sec] 0.01 4/6 .com .com .com .com 4 .com u datasheet
samwin SW830 rev0.1 04.10.1 time v ds (t) q gd q gs v gs 10v charge q g dut 1ma same type as dut 200nf 50k 300nf v gs v ds fig 12.gatecharge testcircuit & waveforms fig 14. unclampedinductiveswitchingtest circuit & waveforms fig 13.switching testcircuit & waveforms v dd (0.5 rated v ds ) v ds v in 90% 10% t d(on) t r t on t d(off) t f t off v ds 10v r g dut r l pulse generator v dd t p v ds l r g dut 10v bv dss i as i d (t) v dd eas= ---l l i as 2 --------------- bv dss bv dss -v dd 1 2 5/6 .com .com .com .com 4 .com u datasheet
samwin SW830 rev0.1 04.10.1 fig 15. peakdiode recovery dv/dttest circuit & waveforms v dd dut v ds + __ driver l same type as dut r g dv/dt controlled by r g is controlledby pulse period v gs v gs (driver) i s (dut) v ds (dut) i fm ,body diode forward current i rm di/dt body diode reverse current body diode recovery dv/dt v f body diode forward voltage drop gate pulse width gate pulseperiod d = --------------------------- 10v v dd 6/6 .com .com .com 4 .com u datasheet
|
